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Premixed Gas Argon Fluoride , ArF Gas Mixtures 193nm Lithography

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Premixed Gas Argon Fluoride , ArF Gas Mixtures 193nm Lithography

China Premixed Gas Argon Fluoride , ArF Gas Mixtures 193nm Lithography supplier
Premixed Gas Argon Fluoride , ArF Gas Mixtures 193nm Lithography supplier Premixed Gas Argon Fluoride , ArF Gas Mixtures 193nm Lithography supplier

Large Image :  Premixed Gas Argon Fluoride , ArF Gas Mixtures 193nm Lithography

Product Details:

Place of Origin: China
Brand Name: Newradar
Certification: ISO/DOT/GB
Model Number: N/A

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Price: negotiation
Packaging Details: Packed in10L-50L cylinder or packed according to the demands.
Delivery Time: 25 working days after received your payment
Payment Terms: L/C, , T/T, Western Union, MoneyGram
Supply Ability: 500 pcs per month
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Detailed Product Description
Filling Gas: Argon, Neon And Fluorine Gas Mixtures Product Name: Argon Fluoride Mixtures
Chemical Formula: ArF Application: Excimer Lasers
Density: Unknown Molar Mass: 59.954 G/mol

Premixed Gas Argon Fluoride , ArF Gas Mixtures 193nm Lithography

 

 

Description:

 

The most widespread industrial application of ArF excimer lasers has been in deep-ultraviolet photolithography for the manufacturing of microelectronic devices. From the early 1960s through the mid-1980s, Hg-Xe lamps had been used for lithography at 436, 405 and 365 nm wavelengths. However, with the semiconductor industry’s need for both finer resolution and higher production throughput, the lamp-based lithography tools were no longer able to meet the industry’s requirements.

 

This challenge was overcome when in a pioneering development in 1982, deep-UV excimer laser lithography was invented and demonstrated at IBM by K. Jain. With phenomenal advances made in equipment technology in the last two decades, today semiconductor electronic devices fabricated using excimer laser lithography total $400 billion in annual production. As a result, it is the semiconductor industry viewthat excimer laser lithography has been a crucial factor in the continued advance of the so-called Moore’s law.

 

From an even broader scientific and technological perspective, since the invention of the laser in 1960, the development of excimer laser lithography has been highlighted as one of the major milestones in the 50-year history of the laser.

 

 

Specifications:

 

1. Physical properties

 

Commodity Argon Fluoride gas
Molecular Formula ArF
Phase Gas
Color

Colorless

Hazardous class for transort 2.2

 

2. Typical technical data (COA)

 

Major Components
COMPONENTS CONCENTRATION RANGE
Fluorine 1.0% 0.9-1.0%
Argon 3.5% 3.4-3.6%
Neon Balance  
Maxinum Impurities
COMPONENT CONCENTRATION(ppmv)
Carbon Dioxide (CO2) <5.0
Carbon Monoxide (CO) <1.0
Carbon Tetrafluoride (CF4) <2.0
Carbonyl Fluoride (COF2) <2.0
Helium (He) <8.0
Moisture (H2O) <25.0
Nitrogen (N2) <25.0
Nitrogen Trifluoride (NF3) <1.0
Oxygen (O2) <25.0
Silicon Tetrafluoride (SiF4) <2.0
Sulfur Hexafluoride (SF6) <1.0
THC (as Methane) (CH4) <1.0
Xenon (Xe) <10.0

 

3. Package

 

Cylinder Specifications Contents Pressure
Cylinder Valve Outlet Options Cubic Feet Liters PSIG BAR
1 CGA679 DISS 728 265 7500 2000 139
2 CGA679 DISS 728 212 6000 2000 139
3 CGA679 DISS 728 71 2000 1800 125

 

Applications:

 

Argon Fluoride Mixtures are used in 193 nm lithography applications, usually in conjunction with an inert gas mixture.

 

Premixed Gas Argon Fluoride , ArF Gas Mixtures 193nm Lithography

Contact Details
Wuhan Newradar Special Gas Co.,Ltd

Contact Person: Suyee Su

Tel: +8618602768623

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