|CAS No.::||685-63-2||Other Names::||1,1,2,3,4,4-hexafluorbuta-1,3-dieen|
|Hazard Class :||2.3||Place Of Origin::||Hubei|
|Purity::||99.95%||Application::||Fluorocarbon-based Plasma Etching|
|Package::||Seamless Steel Cylinders||Cylinders Volume::||926L|
purity plus specialty gases
C4F6 gas,Hexafluoro-1,3-butadiene for research chemical laboratory
Hexafluoro1,3‐butadine is a toxic, colorless, odorless, flammable liquefied compressed gas.
C4F6 gas as an etchant gas for a high aspect ratio contact hole etching can be a good
alternative to PFC gases.
hexafluoro-1,3-butadiene (C4F6) dry etching gas it has developed in Russia. C4F6 enables dry etching at a line width of as narrow as 90 nm or less. It is therefore indispensable for processing system LSIs and high-speed, large-capacity memory devices that are increasingly used in digital electric appliances and liquid crystal displays.
Fluorocarbon gases are widely used for processing silicon oxide film. Compared with octafluorocyclobutane (C4F8) currently used for processing at the line width of 130 nm, C4F6 has the following advantages:
1.Very low environmental load as it is decomposed in less than two days in the atmosphere (compared with 3,200 years for C4F8)
2.Therefore, useful as an alternative to perfluorocarbons with high global warming potential.
3.High aspect ratio, resulting in narrow and deep grooves (suitable for processing at very narrow line width).
4.High selectivity (ensures etching of silicon oxide film only; does not affect photoresist, silicon substrate or nitride film)
PHYSICAL AND CHEMICAL PROPERTIES
|APPEARANCE AND ODOR||GAS @ 25 °C AND 760 mmHg.|
|MELTING POINT:||-132.1 °C|
|BOILING POINT||6 -7 °C @ 760 mmHg|
|VAPOR PRESSURE:||25 psia @ 20 °C|
|DENSITY:||1.553 g/mL @ -20 °C|
|REFRACTIVE INDEX:||1.378 @ -20 °C|
STANDARD PACKAGE INFORMATION—ASIA AND NORTH AMERICA
|Container Size||44L Steel||8L Steel|
|Valve ConnecƟon||PneumaƟc DISS 724||Manual DISS 724|
1. It can use in fluorine-based etching.
2. C4F6 can use as organometallic film forming gases.