|Filling Pressure::||5mpa||UN NO.::||3160|
|Air & Water Reactions:||HIGHLY FLAMMABLE GAS. VERY TOXIC. VERY TOXIC BY INHALATION. RISK OF EXPLOSION IF HEATED UNDER CONFENEMENT.||Cylinders Certificate::||GB, ISO, CE, DOT|
|Supply Ability::||30 Ton Per Month||Application::||Semi Industry|
|Package::||30-1000kg/per Cylinder||Cylinders Volume::||30LB,50LB Disposable Cylinder|
purity plus specialty gases
C4F6 gas used in digital electric appliances and liquid crystal displays
In the C4F6 molecule the C:F ratio is high enough to control the amount of polymer on the chamber surface and wafer surface with regard to F etching radicals. More important is, that the intrinsic characteristic allows high selectivity to substrates or photo resists and wider process windows compared to e.g. C4F8 (Octafluorobutane). This behavior is particularly beneficial to address the need for sub 0.25 m requirements.
In using Argon as carrier gas nitride selectivity can result in a decreasing function. Xenon as the other possible carrier gas has an increased selectivity. Therefore mixtures from Ar/Xe are a good compromise.
Markets & Applications
|ROUTE OF EXPOSURE||INHALATION: VERY TOXIC IF INHALED. SKIN: MAY BE HARMFUL IF ABSORBED THROUGH SKIN. MAY CAUSE SKIN IRRITATION. MAY CAUSE FROSTBITE. EYES: MAY CAUSE EYE IRRITATION.|
|SIGNS AND SYMPTOMS OF EXPOSURE||TO THE BEST OF OUR KNOWLEDGE, THE CHEMICAL, PHYSICAL, AND TOXICOLOGICAL PROPERTIES HAVE NOT BEEN THOROUGHLY INVESTIGATED.|
1. C4F6 is suggested for the use in plasma, ion beam or sputter etching in semiconductor devices manufacturing.
2. Particularly outstanding results have been observed in plasma dielectric etching with Xe and Ar as carrier gas and dilutants. In plasma dielectric etching it is important to control the plasma chemistries in order to balance etching and deposition species.