|Air & Water Reactions:||HIGHLY FLAMMABLE GAS. VERY TOXIC. VERY TOXIC BY INHALATION. RISK OF EXPLOSION IF HEATED UNDER CONFENEMENT.||Cylinders Certificate::||GB, ISO, CE, DOT|
|Supply Ability::||30 Ton Per Month||Application::||Semi Industry|
|Package::||30-1000kg/per Cylinder||Cylinders Volume::||30LB,50LB Disposable Cylinder|
purity plus specialty gases
C4F6 Gas Environmentally Friendly Gas For Etch Chemistry
Hexafluoro-1,3-butadiene (C4F6) is a relatively new etch gas for the manufacturing of semiconductor devices, especially in critical etch processes that need high aspect ratios and selectivity. It is able to combine very high performance with a benign environmental effect. This gas has become available on an industrial scale only recently and we felt the need to increase the data in our possession on its behavior both in the plasma chamber and in the gas delivery systems.
Ion intensities, and absolute total ion current densities measured both for discharge generated in pure C4F6 and in mixture with Argon. In addition, the ratio of radical densities relative to CF measured using sub-millimeter absorption spectroscopy and optical emission spectroscopy measurements are presented for several gas pressures and gas mixture ratios. A comparison with c-C4F8 is made.
The material compatibility of this gas, which show how this 'exotic' gas can be handled with standard materials.The most significant benefits of C4F6 gas become evident from its demonstrated performance for a range of increasingly demanding advanced etch processes that require concomitant high selectivity to 193 nm photoresists, hardmasks, and a variety of underlayers while preserving critical dimension and profile control. Advantages of C4F6 based etch processes, such as high aspect ratio contact/via etch, high selectivity mask open, and dual damascene etch processes, developed on an Applied Materials dielectric etcher, and analyses of PFC emissions data are discussed.
STABILITY AND REACTIVITY
|STABILITY||STABLE: STABLE UNDER RECOMMENDED STORAGE CONDITIONS. MATERIALS TO AVOID: STRONG OXIDIZING AGENTS. CONDITIONS TO AVOID: DO NOT PIERCE OR BURN, EVEN AFTER USE. DO NOT SPRAY ON A NAKED FLAME OR ANY INCANDESCENT MATERIAL. HEAT, FLAMES AND SPARKS.|
|HAZARDOUS DECOMPOSITION PRODUCTS||HAZARDOUS DECOMPOSITION PRODUCTS: CARBON OXIDES, HYDROGEN FLUORIDE.|
|HAZARDOUS POLYMERIZATION||HAZARDOUS POLYMERIZATION: WILL NOT OCCUR.|
|ROUTE OF EXPOSURE||INHALATION: VERY TOXIC IF INHALED. SKIN: MAY BE HARMFUL IF ABSORBED THROUGH SKIN. MAY CAUSE SKIN IRRITATION. MAY CAUSE FROSTBITE. EYES: MAY CAUSE EYE IRRITATION.|
|SIGNS AND SYMPTOMS OF EXPOSURE||TO THE BEST OF OUR KNOWLEDGE, THE CHEMICAL, PHYSICAL, AND TOXICOLOGICAL PROPERTIES HAVE NOT BEEN THOROUGHLY INVESTIGATED.|
1. A new generation of semiconductor etching gas.
2.Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch.
3.Plasma Etching Processes for Sub-quarter Micron Devices: